"Landau Quantization of Topological Surface States in Bi2Se3"

Peng Cheng: Canli Song, Tong Zhang, Yanyi Zhang, Yilin Wang, Jin-Feng Jia, Jing Wang, Yayu Wang, Bang-Fen Zhu, Xi Chen, Xucun Ma, Ke He, Lili Wang, Xi Dai, Zhong Fang, Xincheng Xie, Xiao-Liang Qi, Chao-Xing Liu, Shou-Cheng Zhang, and Qi-Kun Xue; Phys. Rev. Lett., 08/09/10.

Additional Authors: Canli Song, Tong Zhang, Yanyi Zhang, Yilin Wang, Jin-Feng Jia, Jing Wang, Yayu Wang, Bang-Fen Zhu, Xi Chen, Xucun Ma, Ke He, Lili Wang, Xi Dai, Zhong Fang, Xincheng Xie, Xiao-Liang Qi, Chao-Xing Liu, Shou-Cheng Zhang, and Qi-Kun Xue

Abstract:

We report the direct observation of Landau quantization in Bi2Se3 thin films by using a low-temperature scanning tunneling microscope. In particular, we discovered the zeroth Landau level, which is predicted to give rise to the half-quantized Hall effect for the topological surface states. The existence of the discrete Landau levels (LLs) and the suppression of LLs by surface impurities strongly support the 2D nature of the topological states. These observations may eventually lead to the realization of quantum Hall effect in topological insulators.