"Hybrid Diamond-Silicon Carbide Structures Incorporating Silicon-Vacancies in Diamond as Quantum Emitters"

Jingyuan Linda Zhang: Hitoshi Ishiwata, Marina Radulaski, Thomas M. Babinec, Kai Muller, Konstantinos G. Lagoudakis, Robert Edgington, Kassem Alassaad, Gabriel Ferro, Nicholas A. Melosh, Zhi-Xun Shen, Jelena Vuckovic; 2015 Conference on Lasers and Electro-Optics, 05/15/15.

Additional Authors: Hitoshi Ishiwata, Marina Radulaski, Thomas M. Babinec, Kai Muller, Konstantinos G. Lagoudakis, Robert Edgington, Kassem Alassaad, Gabriel Ferro, Nicholas A. Melosh, Zhi-Xun Shen, Jelena Vuckovic

Abstract:

We demonstrate a novel materials technique for generating several hybrid solid state nano- and micro-photonic devices. Our approach combines the growth of nanoscale (∼100 nm) and micron scale (∼2 μm) diamonds on silicon carbide (3C and 4H polytype) substrate via chemical vapor deposition (CVD) from molecular diamond (‘diamondoid’) seed with the use of these particles as a hard mask for pattern transfer into the substrate. Both diamond and silicon carbide are well known to possess optically active spins for applications in quantum information processing, metrology and sensing. In our case, diamond silicon vacancy centers are generated via plasma-assisted diffusion from the silicon carbide substrate.