"Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth"

Alison E. Rugar: Haiyu Lu, Constantin Dory, Shuo Sun, Patrick J. McQuade, Zhi-Xun Shen, Nicholas A. Melosh, Jelena Vučković; Nano Letters, 03/11/20.

Additional Authors: Haiyu Lu, Constantin Dory, Shuo Sun, Patrick J. McQuade, Zhi-Xun Shen, Nicholas A. Melosh, Jelena Vučković

Abstract:

Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.