"Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon"

Di Lu: Sam Crossley, Ruijuan Xu, Yasuyuki Hikita, Harold Y. Hwang; NanoLetters, 05/28/19.

Additional Authors: Sam Crossley, Ruijuan Xu, Yasuyuki Hikita, Harold Y. Hwang

Abstract:

Crystalline oxide ferroelectric tunnel junctions enable persistent encoding of information in electric polarization, featuring nondestructive readout and scalability that can exceed current commercial high-speed, nonvolatile ferroelectric memories. However, the well-established fabrication of epitaxial devices on oxide substrates is difficult to adapt to silicon substrates for integration into complementary metal-oxide-semiconductor electronics. In this work, we report ferroelectric tunnel junctions based on 2.8 nm-thick BaTiO3 films grown epitaxially on SrTiO3 growth substrates, released, and relaminated onto silicon. The performance of the transferred devices is comparable to devices characterized on the oxide substrate, suggesting a viable route toward next-generation nonvolatile memories broadly integrable with different materials platforms.