"Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI"

C. Bell: M. S. Bahramy, H. Murakawa, J. G. Checkelsky, R. Arita, Y. Kaneko, Y. Onose, M. Tokunaga, Y. Kohama, N. Nagaosa, Y. Tokura and H. Y. Hwang; Physical Review B, 02/28/13.

Additional Authors: M. S. Bahramy, H. Murakawa, J. G. Checkelsky, R. Arita, Y. Kaneko, Y. Onose, M. Tokunaga, Y. Kohama, N. Nagaosa, Y. Tokura and H. Y. Hwang

Abstract:

Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces.