"Direct Optical Coupling to an Unoccupied Dirac Surface State in the Topological Insulator Bi2Se3"

J. A. Sobota: S.-L. Yang, A. F. Kemper, J. J. Lee, F. T. Schmitt, W. Li, R. G. Moore, J. G. Analytis, I. R. Fisher, P. S. Kirchmann, T. P. Devereaux, and Z.-X. Shen; Physical Review Letters, 09/24/13.

Additional Authors: S.-L. Yang, A. F. Kemper, J. J. Lee, F. T. Schmitt, W. Li, R. G. Moore, J. G. Analytis, I. R. Fisher, P. S. Kirchmann, T. P. Devereaux, and Z.-X. Shen

Abstract:

We characterize the occupied and unoccupied electronic structure of the topological insulator Bi2Se3 by one-photon and two-photon angle-resolved photoemission spectroscopy and slab band structure calculations. We reveal a second, unoccupied Dirac surface state with similar electronic structure and physical origin to the well-known topological surface state. This state is energetically located 1.5 eV above the conduction band, which permits it to be directly excited by the output of a Ti:sapphire laser. This discovery demonstrates the feasibility of direct ultrafast optical coupling to a topologically protected, spin-textured surface state.