John Paul Strachan (SIMES Friday Seminar)

Date(s) - Jan 23 2015
11:00 AM - 12:00 PM

Shasta Room, Bldg. 40, Room 361


Metal-oxide resistance switching nanodevices for next generation computing opportunities.

John Paul Strachan
Senior Research Scientist, Hewlett-Packard Laboratories, Palo Alto, CA.

Nanoscale devices composed of transition metal-oxide layers exhibiting a prominent resistance change (memristors) have been extensively researched for their technological potential. The mechanism for the reversible resistance change in these systems involves an interaction of many physical effects including electrochemistry, ion motion driven by electric fields and concentration gradients, and interactions with thermal effects. While a complete physical understanding is still in development, I will describe some of the insights gained from direct measurements using structurally and chemically-sensitive techniques with nanoscale resolution such as x-ray spectromicroscopy. Ultimately, any utilization of this technology depends critically on predictive and microphysically accurate device models, and I will describe our efforts in this area. Throughout this talk, I would like to step outside of the device physics perspective in order to discuss some of the higher level technological trends and how devices of this type can drive more computationally-efficient architectures as well as future neuromimetic circuits and systems.