"Vertical field-effect transistor based on wave-function extension"

A. Sciambi: M. Pelliccione, M. P. Lilly, S. R. Bank, A. C. Gossard, L. N. Pfeiffer, K. W. West, and D. Goldhaber-Gordon; Phys. Rev. B, 08/18/11.

Additional Authors: M. Pelliccione, M. P. Lilly, S. R. Bank, A. C. Gossard, L. N. Pfeiffer, K. W. West, and D. Goldhaber-Gordon

Abstract:

We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly depleting one layer will extend its wave function to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.