"Transistor operation and mobility enhancement in top-gated LaAlO3/SrTiO3 heterostructures"

Masayuki Hosoda: Yasuyuki Hikita, Harold Y. Hwang and Christopher Bell; Appl. Phys. Lett. , 09/02/13.

Additional Authors: Yasuyuki Hikita, Harold Y. Hwang and Christopher Bell


We report the operation of LaAlO/SrTiO depletion mode top-gated junction field-effect transistors using a range of LaAlO thicknesses as the top gate insulator. Gated Hall bars show near ideal transistor characteristics at room temperature with on-off ratios greater than 1000. Lower temperature measurements demonstrate a systematic increase in the Hall mobility as the sheet carrier density in the channel is depleted via the top gate, providing a route to higher mobility, lower density electron gases in this system.