"Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures"

B. S. Y. Kim: Y. A. Birkholzer, X. Feng, Y. Hikita, and H. Y. Hwang; Applied Physics Letters, 04/04/19.

Additional Authors: Y. A. Birkholzer, X. Feng, Y. Hikita, and H. Y. Hwang


We have examined the band alignment in SrIrO3/Nb:SrTiO3 (001) heterojunctions at room temperature using three independent techniques: current–voltage and capacitance–voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metalsemiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ~14%, with an average value of 1.44 ± 0.11eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.