"Pressure-induced behavior of the hydrogen-dominant compound SiH4(H2)2 from first-principles calculations"

Xing-Qiu Chen: Shibing Wang, Wendy L. Mao, and C. L. Fu ; Phys. Rev. B, 09/21/10.

Additional Authors: Shibing Wang, Wendy L. Mao, and C. L. Fu



The structural and electronic properties of the high-pressure molecular compound SiH4(H2)2 have been calculated using density-functional theory. We identify the molecular hydrogen positions within the face-centered cubic unit cell and further find that pressure-induced intermolecular interaction between SiH4 and H2 units plays an important role in stabilizing this new compound. The electronic structure is characterized by a wide band gap of 6.1 eV at 6.8 GPa, which closes with pressure and finally becomes metallic at 200 GPa due to electronic band overlap accompanied by a structure change. These findings have potential implications for understanding metallization and superconductivity in H2.