"Distinct Electronic Structure for the Extreme Magnetoresistance in YSb"

Junfeng He: Chaofan Zhang, Nirmal J. Ghimire, Tian Liang, Chunjing Jia, Juan Jiang, Shujie Tang, Sudi Chen, Yu He, S.-K. Mo, C. C. Hwang, M. Hashimoto, D. H. Lu, B. Moritz, T. P. Devereaux, Y. L. Chen, J. F. Mitchell, and Z.-X. Shen; Physical Review Letters, 12/23/16.

Additional Authors: Chaofan Zhang, Nirmal J. Ghimire, Tian Liang, Chunjing Jia, Juan Jiang, Shujie Tang, Sudi Chen, Yu He, S.-K. Mo, C. C. Hwang, M. Hashimoto, D. H. Lu, B. Moritz, T. P. Devereaux, Y. L. Chen, J. F. Mitchell, and Z.-X. Shen

Abstract:

An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.