"DC Hall coefficient of the strongly correlated Hubbard model"

Wen O. Wang: Jixun K. Ding, Brian Moritz, Edwin W. Huang and Thomas P. Devereaux; npj Quantum Materials, 07/24/20.

Additional Authors: Jixun K. Ding, Brian Moritz, Edwin W. Huang and Thomas P. Devereaux

Abstract:

The Hall coefficient is related to the effective carrier density and Fermi surface topology in non-interacting and weakly interacting systems. In strongly correlated systems, the relation between the Hall coefficient and single-particle properties is less clear. Clarifying this relation would give insight into the nature of transport in strongly correlated materials that lack well-formed quasiparticles. In this work, we investigate the DC Hall coefficient of the Hubbard model using determinant quantum Monte Carlo in conjunction with a recently developed expansion of magneto-transport coefficients in terms of thermodynamic susceptibilities. At leading order in the expansion, we observe a change of sign in the Hall coefficient as a function of temperature and interaction strength, which we relate to a change in the topology of the apparent Fermi surface. We also combine our Hall coefficient results with optical conductivity values to evaluate the Hall angle, as well as effective mobility and effective mass based on Drude theory of metals.