"Characterization of collective ground states in single-layer NbSe2"

Miguel M. Ugeda: Aaron J. Bradley, Yi Zhang, Seita Onishi, Yi Chen, Wei Ruan, Claudia Ojeda-Aristizabal, Hyejin Ryu, Mark T. Edmonds, Hsin-Zon Tsai, Alexander Riss, Sung-Kwan Mo, Dunghai Lee, Alex Zettl, Zahid Hussain, Zhi-Xun Shen & Michael F. Crommie; Nat Phys, 11/02/15.

Additional Authors: Aaron J. Bradley, Yi Zhang, Seita Onishi, Yi Chen, Wei Ruan, Claudia Ojeda-Aristizabal, Hyejin Ryu, Mark T. Edmonds, Hsin-Zon Tsai, Alexander Riss, Sung-Kwan Mo, Dunghai Lee, Alex Zettl, Zahid Hussain, Zhi-Xun Shen & Michael F. Crommie

Abstract:

Layered transition metal dichalcogenides are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW =33 K and superconductivity sets in at Tc =7.2 K. Below Tc these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single two-dimensional (2D) layer of NbSe2 by means of low-temperature scanning tunnelling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and electrical transport measurements. We demonstrate that 3×3 CDW order in NbSe2 remains intact in two dimensions. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of ∆=4 meV at the Fermi energy, which is accessible by means of STS owing to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified (compared to bulk) electronic structure of single-layer NbSe2, thus providing insight into CDW formation and superconductivity in this model strongly correlated system.