"Methods for depositing a silicon containing layer with argon gas dilution"

Qunhua Wang: Weijie Wang, Young Jin Choi, Seon-Mee Cho, Yi Cui, Beom Soo Park, Soo Young Choi; Applied Materials, Inc., 04/11/13.

Additional Authors: Weijie Wang, Young Jin Choi, Seon-Mee Cho, Yi Cui, Beom Soo Park, Soo Young Choi

Abstract:

Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.