Rob Moore (SIMES Seminar)

Date(s) - Feb 27 2015
11:00 AM - 12:00 PM

Shasta Room, Bldg. 40, Room 361


Probing the Electronic Structure of Thin Film Materials and Interfaces

Robert G. Moore

Staff Scientist, SIMES

SIMES_Slide_Figure- Image accompanying  announcement of Rob Moore's Feb 27 seminar on "Probing the Electronic Structure of Thin Film Materials and Interfaces"

Thin film materials have been transforming science and industry for decades. With the advances in thin film growth techniques and the synthesis of interfaces and heterostructures with atomic precision, numerous new and unexpected phenomena have recently been discovered. While such discoveries revitalize efforts to create materials with tailored properties, little is known about the microscopic electronic structure of such films and interfaces, the driving force underlying all macroscopic physical and chemical properties. By coupling a molecular beam epitaxy (MBE) system to a state of the art angle resolved photoemission spectroscopy (ARPES) system we can explore the fundamental origins of these exotic interfacial states. In this talk I will present recent results on thin films of MoSe2 and FeSe where dramatic changes in the electronic structure, and physical properties, are observed in the 2D limit. MoSe2 is a semiconductor that changes from an indirect to a direct, tunable bandgap when reduced to a single unit cell. FeSe, on the other hand, is a superconductor with a bulk Tc of 8K that shows an order of magnitude enhancement in Tc when grown as a single monolayer on an oxide substrate. The details of the electronic structure of these two systems will be explored with new insights into the underlying physics governing their behavior. Prospects and future directions will also be discussed.